CINaM - Centre Interdisciplinaire de Nanoscience de Marseille

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  • Campus de Luminy
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  • 13288 Marseille Cedex 9
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Accueil du site > Séminaires > A venir ...

A venir ...

 
Jeudi 30 Mars 2017
Fabio Ronci
CNR - Istituto di Struttura della Materia, via Fosso del Cavaliere 100, 00133 Rome, Italy
Reviewing silicene on silver substrates: Si/Ag(110) and Si/Ag(111) systems reconsidered in light of Si-Ag reactivity
Silicene, the 2D silicon allotrope analogue of graphene, was theoretically predicted in 1994 as a stable freestanding buckled honeycomb silicon monolayer with electronic structure hosting, similarly to graphene, Dirac cones. In the last decade several papers reported the synthesis of silicene on Ag(110) and Ag(111) substrates, attracting a large interest in the scientific community. This claim was mainly based on the well-known Si-Ag bulk immiscibility, that would favor the formation of a weakly interactive Si monolayer on top of the Ag substrate, and on the linear dispersion of the electronic band structure near the Fermi level observed by angle resolved photoemission spectroscopy measurements, attributed to the signature of Dirac cones. Several recent papers, however, severely questioned such results. In this seminar, after a brief introduction to this strongly debated topic, I will at first survey our results on the Si/Ag(110) system, showing a systematic study on the different 1D nanostructures (nanoribbons, NRs) growing on the Ag(110) substrate [1] and discussing their nature on the basis of Raman measurements [2] and ab initio calculations [3]. Next, I will relate on the nature of the structures that were reported as being multilayer silicene NRs, demonstrating that such structures are rather the result of a substrate faceting phenomenon [4]. Finally, I will discuss our recently published paper [5] on the Si/Ag(111) system that demonstrates, through a combined DFT and STM study, that the different reconstruction reported for silicene grow inside, rather than on top, the first Ag(111) layer, unveiling the basic exchange mechanism between Si and the topmost layer Ag atoms. References [1] S. Colonna, G. Serrano, P. Gori, A. Cricenti and F. Ronci, J. Phys.: Condens. Matter 25 (2013) 315301. [2] E. Speiser, B. Buick, N. Esser, W. Richter, S. Colonna, A. Cricenti, and F. Ronci, Appl. Phys. Lett. 104 (2014) 161612. [3] C. Hogan, S. Colonna, R. Flammini, A. Cricenti, and F. Ronci, Phys. Rev. B 92 (2015) 115439. [4] F. Ronci, G. Serrano, P. Gori, A. Cricenti, and S. Colonna, Phys. Rev. B 89 (2014) 115437. [5] M. Satta, S. Colonna, R. Flammini, A. Cricenti, and F. Ronci, Phys. Rev. Lett. 115 (2015) 026102.

Jeudi 06 Avril 2017
Patrick TABELING
Groupe Microfluidique, MEMS, Nanostructures (MMN), ESPCI, Paris

Jeudi 27 Avril 2017
Pavel JELINEK

Mercredi 17 Mai 2017
Anna KRIVOSHEEVA
Center of Nanoelectronics and Novel Materials (CNN), Belarusian State University of Informatics and Radioelectronics
State of the Art on DFT modelling and experimental synthesis of 2D dichalcogenides

Mercredi 24 Mai 2017
Yutaka WAKAYAMA