2024
Investigation of a sensitive, selective and cost-effective electrochemical meso-porous silicon based gas sensor for NO2 detection at room temperature
Khaoula Azaiez, Hela Mhamdi, Rabia Benabderrahmane Zaghouani, Tomas Fiorido, Jean-Louis Lazzari, Marc Bendahan, Wissem Dimassi
European Physical Journal: Applied Physics 99:19 (2024)10.1051/epjap/2024240081
High-Order Commensurate Zwitterionic Quinonoid Phase Induces a Nanoscale Dipole Lattice on Graphene
Gaelle Nassar, Diego Cortés-Arriagada, Luis Sanhueza-Vega, Périne Landois, Matthieu Paillet, Haitham Hrich, Sylvie Contreras, Olivier Siri, Simon Pascal, Laurence Masson, Conrad Becker, Alain Ranguis, Romain Parret, Gabriel Canard, Thomas Leoni
Journal of Physical Chemistry C 128:9712-9721 (2024)10.1021/acs.jpcc.4c01695
2023
Electrical monitoring of organic crystal phase transition using MoS2 field effect transistor
Ilan Boulet, Simon Pascal, Frédéric Bedu, Igor Ozerov, Alain Ranguis, Thomas Leoni, Conrad Becker, Laurence Masson, Aleksandar Matkovic, Christian Teichert, Olivier Siri, Claudio Attaccalite, Jean-Roch Huntzinger, Matthieu Paillet, Ahmed-Azmi Zahab, Romain Parret
Nanoscale Advances 5:1681-1690 (2023)10.1039/d2na00817c
Growth and characterization of Cu2ZnxFe1-xSnS4 thin films deposited on n-type silicon substrates
M. Sebai, I. Trabelsi, G. Bousselmi, J.-L. Lazzari, M. Kanzari
Physica B: Condensed Matter 653:414670 (2023)10.1016/j.physb.2023.414670
Preparation and characterization of Cu2ZnxFe1−xSnS4 thin films deposited on intrinsic silicon substrates
Marwa Sebai, Ghada Bousselmi, Jean-Louis Lazzari, Mounir Kanzari
Materials Today Communications 35:105558 (2023)10.1016/j.mtcomm.2023.105558
2022
A one-dimensional high-order commensurate phase of tilted molecules
Anthony Thomas, Thomas Leoni, Olivier Siri, Conrad Becker, Martin Unzog, Christian Kern, Peter Puschnig, Peter Zeppenfeld
Physical Chemistry Chemical Physics 24:9118-9122 (2022)10.1039/d2cp00437b
2021
Demonstration of the Existence of Dumbbell Silicene: A Stable Two-Dimensional Allotrope of Silicon
Thomas Leoni, Conor Hogan, Kai Zhang, Michel Daher Mansour, Romain Bernard, Romain Parret, Andrea Resta, Stefano Colonna, Yves Borensztein, Fabio Ronci, Geoffroy Prévot, Laurence Masson
Journal of Physical Chemistry C 125:17906-17917 (2021)10.1021/acs.jpcc.1c02088
On-surface chemistry using local high electric fields
Thomas Leoni, Tony Lelaidier, Anthony Thomas, Alain Ranguis, Olivier Siri, Claudio Attaccalite, Conrad Becker
Nanoscale Advances 3:5565-5569 (2021)10.1039/d1na00383f
Stereoisomeric selection upon adsorption: A structural and optical study of curcuminoid derivatives on ultrathin films of KCl on Au(111) and on KCl(001) bulk
Thomas Leoni, Laurent Nony, Elena Zaborova, Sylvain Clair, Frédéric Fagès, Franck Para, Alain Ranguis, Conrad Becker, Christian Loppacher
Physical Review B 104 (2021)10.1103/PhysRevB.104.205415
High anisotropic inserted dendritic growth during first stage of Zn monolayer deposition on Ag(111) substrate
Hicham Maradj, Nabil Rochdi, Benedicte Ealet, Sébastien S Vizzini, Jean-Paul Biberian, Bernard Aufray, Haik Jamgotchian
Surfaces and Interfaces (2021)
2020
Energy band gap tuning in Te-doped WS2/WSe2 heterostructures
Anna Krivosheeva, Victor Shaposhnikov, Victor Borisenko, J.-L. Lazzari
Journal of Materials Science 55:9695-9702 (2020)10.1007/s10853-020-04485-x
Study of n-WO3/p-porous silicon structures for gas-sensing applications
H. Mhamdi, R. Benabderrahmane Zaghouani, T. Fiorido, J.-L. Lazzari, Marc Bendahan, W. Dimassi
Journal of Materials Science: Materials in Electronics 31:7862-7870 (2020)10.1007/s10854-020-03324-8
Physical properties of electrodeposited CIGS films on crystalline silicon: Application for photovoltaic hetero-junction
H. Saidi, C. Ben Alaya, M.F. Boujmil, B. Durand, J.L. Lazzari, M. Bouaïcha
Current Applied Physics 20:29-36 (2020)10.1016/j.cap.2019.09.015
Modelization of electrical and optical characteristics of short-wave infrared type I InGaAsBi/InGaAs/InP quantum wells p-i-n detector
N Sfina, I Ammar, J.-L. Lazzari, M Said
Physica Scripta 96:035802 (2020)10.1088/1402-4896/abd49a
2019
Structure of a Zn monolayer on Ag(111) and Ag(110) substrates: an AES, LEED and STM study
Maradj Hicham, Carole Fauquet, Mostefa Ghamnia, Benedicte Ealet, Nabil Rochdi, Sébastien Vizzini, Jean-Paul Biberian, Bernard Aufray, Haik Jamgotchian
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces (2019)10.1016/j.susc.2019.02.007
Electronic Properties of WS 2 /WSe 2 Heterostructure Containing Te Impurity: The Role of Substituting Position
A. Krivosheeva, V. Shaposhnikov, V. e. Borisenko, Jean-Louis Lazzari
International Journal of Nanoscience 18:1940007 (2019)10.1142/S0219581X19400076
Optical Gain and Radiative Current Density in Strain Compensated GaAsP/GaAsBi/GaAsP QWs Laser Structure
N Sfina, A. Jbeli, Jean-Louis Lazzari, M. Saïd
Recent Advances in Photonics and Optics (2019)10.36959/665/321
2018
Multiscale in modelling and validation for solar photovoltaics
Tareq Abu Hamed, Nadja Adamovic, Urs Aeberhard, Diego Alonso-Alvarez, Zoe Amin-Akhlaghi, Matthias auf Der Maur, Neil Beattie, Nikola Bednar, Kristian Berland, Stefan Birner, Marco Califano, Ivana Capan, Bostjan Cerne, Irinela Chilibon, James. Connolly, Frederic Cortes Juan, Jose G F Coutinho, Christin David, Knut Deppert, Vesselin Donchev, Marija Drev, Boukje Ehlen, Nicholas Ekins-Daukes, Jacky Even, Laurentiu Fara, David Fuertes Marron, Alessio Gagliardi, Blas Garrido, Violetta Gianneta, Maria Gomes, Jean-François Guillemoles, Mircea Guina, Janne Halme, Mateja Hocevar, Lucjan Jacak, Witold Jacak, Zoran Jaksic, Lejo Joseph, Spyridon Kassavetis, Vaidotas Kazukauskas, Jean-Paul Kleider, Katarzyna Kluczyk, Radovan Kopecek, Ursa Opara Krasovec, Jean-Louis Lazzari, Efrat Lifshitz, Martin Loncaric, Søren Peder Madsen, Antonio Marti Vega, Denis Mencaraglia, Maria Messing, Felipe Murphy Armando, Androula Nassiopoulou, Ahmed Neijm, Akos Nemcsics, Victor Neto, Laurent Pedesseau, Clas Persson, Konstantinos Petridis, Lacramioara Popescu, Georg Pucker, Jelena Radovanović, Julio Rimada, Mimoza Ristova, Ivana Savic, Hele Savin, Marushka Sendova-Vassileva, Abdurrahman Sengul, José Da Silva, Ullrich Steiner, Jan Storch, Emmanuel Stratakis, Shuxia Tao, Pavel Tomanek, Stanko Tomić, Antti Tukiainen, Rasit Turan, Jose Maria Ulloa, Shengda Wang, Fatma Yuksel, Jaroslav Zadny, Javad Zarbakhsh
EPJ Photovoltaics 9:10 (2018)10.1051/epjpv/2018008
Enhancement of physical properties of stain-etched porous silicon by integration of WO3 nanoparticles
M. Alaya, R. Benabderrahmane Zaghouani, S. Khamlich, J. -L. Lazzari, W. Dimassi
Thin Solid Films 645:51-56 (2018)10.1016/j.tsf.2017.10.041
Noncontact AFM and differential reflectance spectroscopy joint analyses of bis-pyrenyl thin films on bulk insulators: Relationship between structural and optical properties
Franck Bocquet, Laurent Nony, Franck Para, Philipda Luangprasert, Jean-Valère Naubron, Christian Loppacher, Thomas Leoni, Anthony Thomas, Alain Ranguis, Anthony d'Aléo, Frédéric Fages, Conrad Becker
Physical Review B: Condensed Matter and Materials Physics (1998-2015) 97 (2018)10.1103/physrevb.97.235434
Giant ( 12 × 12 ) and ( 4 × 8 ) reconstructions of the 6 H -SiC(0001) surface obtained by progressive enrichment in Si atoms
David Martrou, Thomas Leoni, Florian Chaumeton, Fabien Castanié, Sebastien Gauthier, Xavier Bouju
Physical Review B: Condensed Matter and Materials Physics (1998-2015) 97:81302-81302 (2018)10.1103/PhysRevB.97.081302
Elaboration and characterization of CuInSe 2 thin films using one-step electrodeposition method on silicon substrate for photovoltaic application
H Saïdi, M Boujmil, B Durand, J.-L. Lazzari, M Bouaïcha
Materials Research Express 5:016414 (2018)10.1088/2053-1591/aaa604
Growth of Dihydrotetraazapentacene Layers on Cu(110)
Anthony Thomas, Walter Malone, Thomas Leoni, Alain Ranguis, Zhongrui Chen, Olivier Siri, Abdelkader Kara, Peter Zeppenfeld, Conrad Becker
Journal of Physical Chemistry C 122:10828-10834 (2018)10.1021/acs.jpcc.8b01336
Study of WO3-decorated porous silicon and Al2O3-ALD encapsulation
R. Benabderrahmane Zaghouani, M. Alaya, H. Nouri, J.-L. Lazzari, W. Dimassi
Journal of Materials Science: Materials in Electronics 29:17731-17736 (2018)10.1007/s10854-018-9879-1
National
- Département de Physique, Neuville sur Oise, Cergy-Pontoise, France
- Institut des Sciences Moléculaires d’Orsay, Université Paris-Sud, Orsay, France
- Institut des Nanosciences de Paris, Paris, France
International
- Department of Physics, University of Central Florida, Orlando, Florida, USA
- Consiglio Nazionle delle Ricerche-ISM, via Fosso del Cavaliere, Italy