2024
Epitaxial growth and magnetic properties of Mn5(SixGe1-x)3 thin films
Sueyeong Kang, Matthieu Petit, Vasile Heresanu, Alexandre Altié, Thomas Beaujard, Ganaël Bon, Oscar Cespedes, Brian Hickey, Lisa Michez
Thin Solid Films 797:140338 (2024)10.1016/j.tsf.2024.140338
2023
Competitive actions of MnSi in the epitaxial growth of Mn5Si3 thin films on Si(111)
Ismaïla Kounta, Helena Reichlova, Dominik Kriegner, Rafael Lopes Seeger, Antonin Bad'Ura, Miina Leiviska, Amine Boussadi, Vasile Heresanu, Sylvain Bertaina, Matthieu Petit, Eva Schmoranzerova, Libor Smejkal, Jairo Sinova, Tomas Jungwirth, Vincent Baltz, Sebastian T B Goennenwein, Lisa Michez
Physical Review Materials 7:024416 (2023)10.1103/PhysRevMaterials.7.024416
2022
Tuning the Mn5Ge3 and Mn11Ge8 thin films phase formation on Ge(111) via growth process
Mohamed-Amine Guerboukha, Matthieu Petit, Aurélie Spiesser, Alain Portavoce, Omar Abbes, Vasile Heresanu, Sylvain Bertaina, Cyril Coudreau, Lisa Michez
Thin Solid Films 761:139523 (2022)10.1016/j.tsf.2022.139523
Highly ordered carbon penetration into the Mn5Ge3Cx lattice: A superstructure in Mn5Ge3C0.5 inferred from a Mn55 NMR study
R. Kalvig, E. Jedryka, M. Wojcik, M. Petit, L. Michez
Physical Review B 105:094405 (2022)10.1103/PhysRevB.105.094405
Unveiling the atomic position of C in Mn5Ge3Cx thin films
L.-A. Michez, M. Petit, V. Heresanu, V. Le Thanh, E. Prestat, F. d'Acapito, Q. Ramasse, F. Boscherini, P. Pochet, M. Jamet
Physical Review Materials 6:074404 (2022)10.1103/PhysRevMaterials.6.074404
XPS modeling of GaN/GaAs nanostructure grown by the droplet epitaxy technique
Guy Tsamo, Guillaume Monier, Philip Hoggan, Christine Robert-Goumet, Matthieu Petit, Alain Ranguis, Luc Bideux
Journal of Electron Spectroscopy and Related Phenomena 261 (2022)10.1016/j.elspec.2022.147257
2020
Magnetic anisotropy of one-dimensional Co nanostructures
Michel Daher Mansour, Romain Parret, F. Cheynis, Matthieu Petit, Fadi Choueikani, Lisa Michez, Laurence Masson
Physical Review B 102:155403 (2020)10.1103/PhysRevB.102.155403
Selective modification of the unquenched orbital moment of manganese introduced by carbon dopant in epitaxial Mn5Ge3C0.2/Ge(111) films
R. Kalvig, E. Jedryka, M. Wojcik, Matthieu Petit, L. Michez
Physical Review B: Condensed Matter (1978-1997) 101 (2020)10.1103/PhysRevB.101.094401
Effect of carbon on structural and magnetic properties of $$\hbox {Ge}_{1-x}\hbox {Mn}_{x}$$ nanocolumns
T G Le, V Le Thanh, Lisa Michez
Bulletin of Materials Science 43:103 (2020)10.1007/s12034-020-2082-z
Gaining insights into the formation of high temperature GeMn nanocolumns: the effect of substrate crystalline orientation on their structural and magnetic properties
Thi Giang Le, Lisa Michez, Vinh Le Thanh
Advances in Natural Sciences : Nanoscience and Nanotechnology 11:035011 (2020)10.1088/2043-6254/aba1dd
Electrolyte-gated-organic field effect transistors functionalized by lipid monolayers with tunable pH sensitivity for sensor applications
Tin Phan Nguy, Ryoma Hayakawa, Volkan Kilinc, Matthieu Petit, Yemineni S L V Narayana, Masayoshi Higuchi, Jean-Manuel Raimundo, Anne Charrier, Yutaka Wakayama
Applied Physics Express 13:011005 (2020)10.7567/1882-0786/ab5322
2019
Stable operation of water-gated organic field-effect transistor depending on channel flatness, electrode metals and surface treatment
Tin Phan Nguy, Ryoma Hayakawa, Volkan Kilinc, Matthieu Petit, Jean-Manuel Raimundo, Anne Charrier, Yutaka Wakayama
Japanese Journal of Applied Physics 58:SDDH02 (2019)10.7567/1347-4065/ab09d2
Step flow growth of Mn5Ge3 films on Ge(111) at room temperature
Matthieu Petit, Amine Boussadi, Vasile Heresanu, Alain Ranguis, Lisa Michez
Applied Surface Science 480:529-536 (2019)10.1016/j.apsusc.2019.01.164
2018
Hyperfine fields and anisotropy of the orbital moment in epitaxial Mn5Ge3 films studied by Mn55 NMR
R. Kalvig, E. Jedryka, M. Wojcik, G. Allodi, R. de Renzi, Matthieu Petit, Lisa Michez
Physical Review B: Condensed Matter and Materials Physics (1998-2015) 97:174428-174428 (2018)10.1103/PhysRevB.97.174428
From the very first stages of Mn deposition on Ge(001) to phase segregation
Sion F Olive Mendez, Matthieu Petit, Alain Ranguis, Vinh Le Thanh, Lisa Michez
Crystal Growth & Design 18:5124-5129 (2018)10.1021/acs.cgd.8b00558
Investigations of the Anodic Porous Etching of n-InP in HCl by Atomic Absorption and X-ray Photoelectron Spectroscopies
Lionel Santinacci, Muriel Bouttemy, Matthieu Petit, Anne-Marie Goncalves, Nathalie Simon, Jackie Vigneron, Arnaud Etcheberry
Journal of The Electrochemical Society 165:3131-3137 (2018)10.1149/2.0181804jes
Thiol-functionalization of Mn5Ge3 thin films
Marta K Schütz, Matthieu Petit, Lisa Michez, Alain Ranguis, Guillaume Monier, Christine Robert-Goumet, Jean-Manuel Raimundo
Applied Surface Science 451:191-197 (2018)10.1016/j.apsusc.2018.04.231
2017
Study of manganese germanides formation and their magnetic response
Omar Abbes, Alain Portavoce, Christophe Girardeaux, Lisa Michez, Vinh Le Thanh
Advanced Materials Letters 8:600-604 (2017)
Atomic layer deposition of HfO2 for integration into three-dimensional metal–insulator–metal devices
Loïc Assaud, Kristina Pitzschel, Maïssa K. S. Barr, Matthieu Petit, Guillaume Monier, Margrit Hanbücken, Lionel Santinacci
Applied physics. A, Materials science & processing 123:768 (2017)10.1007/s00339-017-1379-2
Ferromagnetic resonance in Mn 5 Ge 3 epitaxial films with weak stripe domain structure
R Kalvig, E Jedryka, P. Aleshkevych, M Wojcik, W Bednarski, Matthieu Petit, L. Michez
Journal of Physics D: Applied Physics 50:125001 (2017)10.1088/1361-6463/aa5ce5
2016
Synthesis and Study of Stable and Size-Controlled ZnO-SiO2 Quantum Dots: Application as a Humidity Sensor
Mohamed Aymen Mahjoub, Guillaume Monier, Christine Robert-Goumet, François Reveret, Mosaab Echabaane, Damien Chaudanson, Matthieu Petit, Luc Bideux, Bernard Gruzza
Journal of Physical Chemistry C 120:11652-11662 (2016)10.1021/acs.jpcc.6b00135
An introduction to photocatalysis through methylene blue photodegradation
Matthieu Petit, Lisa Michez, Jean-Manuel Raimundo, Tuhiti Malinowski, Philippe Dumas
European Journal of Physics 37:065808 (2016)10.1088/0143-0807/37/6/065808
Electrical and optical measurements of the bandgap energy of a light-emitting diode
Matthieu Petit, Lisa Michez, Jean-Manuel Raimundo, Philippe Dumas
Physics Education 51:025003 (2016)10.1088/0031-9120/51/2/025003
Mn5Ge3C0.6/Ge(111) Schottky contacts tuned by a n-type ultra-shallow doping layer
Matthieu Petit, Ryoma Hayakawa, Yutaka Wakayama, Vinh Le Thanh, Lisa Michez
Journal of Physics D: Applied Physics 49:355101 (2016)10.1088/0022-3727/49/35/355101
UHV equipment for spintronic applications
Ultrahigh vacuum (UHV) growth system dedicated to Ge/Si-based heterostructures for spintronic applications:
- A load-lock chamber equipped with a 4 samples holder carousel
- The main Molecular Beam Epitaxy (MBE) growth chambers:
- MBE-1: Si, Ge, P, C, Al, Mn
- MBE-2: metals (Au, Cr, Co, Mn, Ru, Sn etc)
- OMBE: organic molecules (PTCDI, etc)
- a preparation chamber (ionic cleaning)
- A 4 meters long vacuum transfer pipe connecting these three chambers allowing samples transfers without air exposure.
The maximum size of the samples which can be used is 5 cm / 2” in diameter.
The sample holders can be heated up to 1100°C.
We also have:
- a UHV suitcase to transfer samples
- an Omicron-type sample plates / molyblock adaptator
Effusion and sublimation cells are installed in the MBE chambers:
- Ge, Mn, Sb, Au
- Doping cells: Si, C, GaP (P) (SUSI-D, SUKO-D and DECO-D sources respectively, from MBE-Komponenten)
The growth processes and thin films can be characterized in situ by:
- quartz crystal microbalance
- RHEED (Reflection high-energy electron diffraction)
- AES (Auger electrons spectroscopy)
National
- IM2NP, Marseille
- CEA, Orsay
- SPINTEC, Grenoble
- Institut Néel, Grenoble
- Institut Pascal, Clermont-Ferrand
- C2N, Paris
International
- IFPAN, Varsaw, Poland
- AIST, Tsukuba (つくば市), Japan
- University of Stuttgart, Stuttgart, Germany
- University of Manchester, UK