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N-sources are critical in plasma-ALD of TiN.

Their nature (NH3 or N2), their dilution, the plasma power as well as thermal treatments significantly modify the film properties and conductivity. 


Title : Conductive TiN thin films grown by plasma-enhanced atomic layer deposition: Effects of N-sources and thermal treatments

Auteurs : Clémence Badie, Héloïse Tissot, Beniamino Sciacca, Maïssa K.Barr, Julien Bachmann, Christophe Vallée, Gaël Gautier, Thomas Defforge, Vincent Astié, Jean-Manuel Decams, Mikhael Bechelany, Lionel Santinacci*

Ref :  J. Vac. Sci. Techno. A. 41 (3), 032401 (2023)